en>Yobot: WP:CHECKWIKI error fixes + other fixes using AWB (10065)

2014-03-28T17:19:16Z

WP:CHECKWIKI error fixes + other fixes using AWB (10065)

← Older revision		Revision as of 19:19, 28 March 2014
Line 1:		Line 1:
	~~The '''saturation current''' or, more accurately,~~ the '''reverse saturation current''' is that part of the reverse current in a [[semiconductor]] [[diode]] caused by diffusion of minority [[charge carrier\|carriers]] from the neutral regions to the [[depletion region]]. ~~This current~~ is ~~almost independent of the reverse voltage. (Steadman 1993, 459)~~		Greetings! I home std test kit am Marvella and I really feel comfortable when people use the full title. Hiring is her day job now but she's usually needed her own [http://www.confidantetest.com/ business]. He is really fond of performing ceramics but he is struggling to find time for std testing at home it. Minnesota is where he's been residing for years.<br><br>Check out my web site :: std home test ([http://www.crmidol.com/discussion/19701/how-tell-if-woman-interested-or-sexually-captivated-you Read More Listed here])

	'~~'I''<sub>S</sub>, the reverse bias saturation current for an ideal p–n~~ [~~[diode]] is given by (Schubert 2006, 61)~~:

	<math>I_\mathrm{S} = e A \left( \sqrt{\frac{D_\mathrm{p}}{\tau_\mathrm{p}}} \frac{n_\mathrm{i}^2}{N_\mathrm{D}} + \sqrt{\frac{D_\mathrm{n}}{\tau_\mathrm{n}}} \frac{n_\mathrm{i}^2}{N_\mathrm{A}} \right),\,</~~math>~~

	~~where~~
	~~:''I''<sub>S<~~/~~sub>~~ is ~~the reverse bias saturation current,~~
	~~:''e''~~ is ~~[[elementary charge]]~~
	~~:''A''~~ is ~~the cross-sectional area~~
	~~:''D'~~'~~<sub>p,n</sub> are the [[diffusion coefficient]]~~s ~~of holes and electrons, respectively,~~
	~~:''N''~~<~~sub~~>~~D,A~~<~~/sub~~> ~~are the donor and acceptor concentrations at the n side and p side, respectively,~~
	:~~''n''<sub>i</sub> is the intrinsic carrier concentration in the semiconductor material,~~
	:~~<math>\tau_\mathrm{p,n}</math> are the carrier lifetimes of holes and electrons, respectively.~~

	~~Note that the saturation current is ''not'' a constant for a given device; it~~ [http://www.~~pveducation~~.~~org~~/~~pvcdrom~~/~~solar~~-~~cell~~-~~operation/effect~~-of-~~temperature varies~~] ~~with temperature; this variance is the dominant term in the temperature coefficient for a diode. A common rule of thumb is that it doubles for every 10°C rise in temperature. (Bogart 1986, 40~~)

	~~==References==~~
	* Steadman, J. W. (1993). "Electronics" in R. C. Dorf, ''The Electrical Engineering Handbook.'' Boca Raton: CRC Press.

	* Schubert, E. Fred. (2006). "LED basics: Electrical properties" in ''Light-Emitting Diodes'' : Cambridge Press.

	* Bogart, F. Theodore Jr. (1986). "Electronic Devices and Circuits" : Merill Publishing Company

	~~{{DEFAULTSORT:Saturation Current}}~~
	~~[[Category:Diodes]]~~

93.135.33.97: Subcat

2012-02-04T13:26:58Z

Subcat

New page

The '''saturation current''' or, more accurately, the '''reverse saturation current''' is that part of the reverse current in a [[semiconductor]] [[diode]] caused by diffusion of minority [[charge carrier|carriers]] from the neutral regions to the [[depletion region]]. This current is almost independent of the reverse voltage. (Steadman 1993, 459)

''I''S, the reverse bias saturation current for an ideal p–n [[diode]] is given by (Schubert 2006, 61):

<math>I_\mathrm{S} = e A \left( \sqrt{\frac{D_\mathrm{p}}{\tau_\mathrm{p}}} \frac{n_\mathrm{i}^2}{N_\mathrm{D}} + \sqrt{\frac{D_\mathrm{n}}{\tau_\mathrm{n}}} \frac{n_\mathrm{i}^2}{N_\mathrm{A}} \right),\,</math>

where
:''I''S is the reverse bias saturation current,
:''e'' is [[elementary charge]]
:''A'' is the cross-sectional area
:''D''p,n are the [[diffusion coefficient]]s of holes and electrons, respectively,
:''N''D,A are the donor and acceptor concentrations at the n side and p side, respectively,
:''n''i is the intrinsic carrier concentration in the semiconductor material,
:<math>\tau_\mathrm{p,n}</math> are the carrier lifetimes of holes and electrons, respectively.

Note that the saturation current is ''not'' a constant for a given device; it [http://www.pveducation.org/pvcdrom/solar-cell-operation/effect-of-temperature varies] with temperature; this variance is the dominant term in the temperature coefficient for a diode. A common rule of thumb is that it doubles for every 10°C rise in temperature. (Bogart 1986, 40)

==References==
* Steadman, J. W. (1993). "Electronics" in R. C. Dorf, ''The Electrical Engineering Handbook.'' Boca Raton: CRC Press.

* Schubert, E. Fred. (2006). "LED basics: Electrical properties" in ''Light-Emitting Diodes'' : Cambridge Press.

* Bogart, F. Theodore Jr. (1986). "Electronic Devices and Circuits" : Merill Publishing Company

{{DEFAULTSORT:Saturation Current}}
[[Category:Diodes]]

Unique negative dimension - Revision history

en>Yobot: WP:CHECKWIKI error fixes + other fixes using AWB (10065)

93.135.33.97: Subcat