File:Silicon dislocation orientation 111 mag 500x 2.png

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Silicon_dislocation_orientation_111_mag_500x_2.png ‎(768 × 576 pixels, file size: 574 KB, MIME type: image/png)

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Summary

Description

Title: Dislocation in Si crystal, orientation 111

  • Desc: Image of dislocation in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of the dislocation.
  • Author: Twisp
  • Date: 24.08.2005
Date 13 September 2005 (original upload date)
Source No machine-readable source provided. Own work assumed (based on copyright claims).
Author No machine-readable author provided. Twisp assumed (based on copyright claims).

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Public domain I, the copyright holder of this work, release this work into the public domain. This applies worldwide.
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inception

13 September 2005

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Date/TimeThumbnailDimensionsUserComment
current02:17, 13 September 2005Thumbnail for version as of 02:17, 13 September 2005768 × 576 (574 KB)wikimediacommons>Twisp* Title: Dislocation in Si crystal, orientation 111 * Desc: Image of dislocation in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of the dislocation. * Auth

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